128Mb: x16 Mobile SDRAM
Operation
Deep Power-Down
Deep power-down mode is a maximum power savings feature achieved by shutting off
the power to the entire memory array of the device. Data in the memory array will not be
retained once deep power-down mode is executed. Deep power-down mode is entered
by having all banks idle then CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
In order to exit deep power-down mode, CKE must be asserted HIGH. Upon exit of deep
power-down mode a full Mobile SDRAM initialization sequence, is required.
Clock Suspend
The clock suspend mode is entered when a column access/burst is in progress and CKE
is registered LOW. In the clock suspend mode, the internal clock is deactivated,
“freezing” the synchronous logic.
For each positive clock edge on which CKE is sampled LOW, the next internal positive
clock edge is suspended. Any command or data present on the input balls at the time of
a suspended internal clock edge is ignored; any data present on the DQ balls remains
driven; and burst counters are not incremented, as long as the clock is suspended. (See
examples in Figure 25 and Figure 26 on page 30.)
Clock suspend mode is exited by registering CKE HIGH; the internal clock and related
operation will resume on the subsequent positive clock edge.
Figure 25:
Clock Suspend During WRITE Burst
T0
T1
T2
T3
T4
T5
C LK
C KE
INTERNAL
C LO C K
C OMMAND
NOP
WRITE
NOP
NOP
ADDRE SS
BANK,
C OL n
D IN
D IN
n
D IN
n +1
D IN
n +2
DON ’ T C ARE
Notes:
1. BL = 4 or greater, and DM is LOW.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
29
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
相关PDF资料
MTC100-JA2-P34 CONTACT INSERT PIN
MX841BE IC CONVERTER WHITE LED 8-SOIC
MXHV9910BTR IC LED DRIVER HIGH BRIGHT 8-SOIC
MXN12FB12F MOTOR BRUSHED DC 12V 2922RPM
MXN13FB08B1 MOTOR BRUSHED DC 8V 4714RPM
N01L63W2AB25I IC SRAM ASYNC 1MBIT ULP 48-BGA
N01L63W3AB25I IC SRAM 1MBIT 3V LP 48-BGA
N01L83W2AN5I IC SRAM 1MB ASYNC CMOS 3STSOP-I
相关代理商/技术参数
MT48H8M16LFB4-8 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘